鈥?/div>
Wide Safe Operating Area
Built-in Free Wheeling diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
B
Equivalent Circuit
C
E
1
TO-126
2.Collector
3.Base
1.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Storage Temperature
Parameter
Value
700
400
12
4
8
2
4
30
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
* Pulse Test Pulse Width = 5ms, Duty Cycle
鈮?/div>
1.0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CE
= 700V, V
EB
= 0
V
CE
= 400V, IB = 0
V
EB
= 12V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.5A
I
F
= 2A
10
8
Min.
700
400
12
100
250
100
40
0.7
1.0
1.5
1.1
1.2
1.3
2.5
V
Typ.
Max.
Units
V
V
V
mA
mA
mA
V
BE
(sat)
Base-Emitter Saturation Voltage
V
V
f
Internal Diode Forward Voltage Drop
V
漏2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
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