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FJD3076

FJD3076

Power Amplifier Applications

鈥?Low Collector-Emitter Saturation Voltage

1

D-PACK

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation (T

a

=25擄C)

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

40

32

5

2

1

10

150

- 55 ~ 150

Units

V

V

V

A

W

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE

(sat)

f

T

C

ob

Parameter

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

I

C

= 1mA, I

B

= 0

I

C

= 50碌A(chǔ)

I

E

= 50碌A(chǔ)

V

CB

= 20V, I

E

= 0

V

EB

= 4V, I

C

= 0

V

CE

= 3V, I

C

= 0.5A

I

C

= 2A, I

B

= 0.2A

V

CE

= 5V, I

E

= -0.5A,

f = 100MHz

V

CB

= 10V, I

E

= 0A,

f = 1MHz

130

0.5

100

50

Min.

32

40

5

1

1

390

0.8

V

MHz

pF

Typ.

Max.

Units

V

V

V

碌A(chǔ)

碌A(chǔ)

漏2001 Fairchild Semiconductor Corporation

Rev. C1, December 2001

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