FJC790
FJC790
Camera Strobe Flash Application
鈥?Complement to FJC690
鈥?High Collector Current
鈥?Low Collector-Emitter Saturation Voltage
SOT-89
Marking: F79
1
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-40
-5
-2
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -100碌A(chǔ), I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100碌A(chǔ), I
C
= 0
V
CE
= -35V, V
B
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1mA
V
CE
= -2V, I
C
= -2mA
I
C
= -0.5A, I
B
= -5mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -50mA
I
C
= -1A, I
B
= -10mA
V
CE
= -2V, I
C
= 1A
V
CB
= -10V, I
E
= 0,
f = 1MHz
20
300
250
200
150
Min.
-50
-40
-5
-0.1
-0.1
800
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
V
CE
(sat)
Collector-Emitter Saturation Voltage
-250
-350
-450
-0.9
-0.8
mV
mV
mV
V
V
pF
V
BE
(sat)
V
BE
(on)
C
OB
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
漏2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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