FJC690
FJC690
Camera Strobe Flash Application
鈥?Complement to FJC790
鈥?High Collector Current
鈥?Low Collector-Emitter Saturation Voltage
SOT-89
Marking: F69
1
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
Junction Temperature
Storage Temperature
Value
45
45
5
2
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 35V, V
B
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 1mA
V
CE
= 2V, I
C
= 2mA
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 1A, I
B
= 5mA
I
C
= 1A, I
B
= 10mA
V
CE
= 2V, I
C
= 1A
V
CB
= 10V, I
E
= 0,
f = 1MHz
20
500
400
150
80
300
0.9
0.85
mV
mV
V
V
pF
Min.
45
45
5
0.1
0.1
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
OB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
漏2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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2
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