FJC2383 NPN Epitaxial Silicon Transistor
July 2005
FJC2383
NPN Epitaxial Silicon Transistor
Color TV Audio Output & Color TV Vertical Deflection Output
Marking
2 3
P Y
1
8 3
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
T
a
= 25擄C unless otherwise noted
Parameter
Ratings
160
160
6
1
0.5
500
150
-55 ~ 150
Units
V
V
V
A
A
mW
擄C
擄C
Collector Power Dissipation
Junction Temperature
Storage Temperature
a
=
Electrical Characteristics
T
Symbol
I
CBO
I
EBO
BV
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
25擄C unless otherwise noted
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 150V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 200mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 200mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min.
Typ.
Max.
1
1
Units
碌A(chǔ)
碌A(chǔ)
V
160
100
0.45
20
100
20
320
1.5
0.75
V
V
MHz
pF
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJC2383 Rev. B