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FJC2098

FJC2098

Camera Strobe Flash Application

鈥?Complement to FJC1386

鈥?High Collector Current

鈥?Low Collector-Emitter Saturation Voltage

SOT-89

1

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Power Dissipation(T

C

=25擄C)

Junction Temperature

Storage Temperature

Value

50

20

6

5

0.5

150

- 55 ~ 150

Units

V

V

V

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CEO

I

EBO

h

FE

V

CE

(sat)

V

BE

(sat)

C

OB

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Output Capacitance

Test Condition

I

C

=50碌A(chǔ), I

E

=0

I

C

=1mA, I

B

=0

I

E

=50碌A(chǔ), I

C

=0

V

CE

=40V, V

B

=0

V

EB

=5V, I

C

=0

V

CE

=2V, I

C

=0.5A

I

C

=4A, I

B

=0.1A

I

C

=4A, I

B

=0.1A

V

CB

=20V, I

E

=0, f=1MHz

23

120

Min.

50

20

6

0.5

0.5

390

1.0

1.2

V

V

pF

Typ.

Max.

Units

V

V

V

碌A(chǔ)

碌A(chǔ)

h

FE

Classification

Classification

h

FE

Q

120 ~ 270

R

180 ~ 390

Marking

JA Q

h

FE

grade

漏2003 Fairchild Semiconductor Corporation

Rev. A2, February 2003

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