FJC1386
FJC1386
Low Saturation Transistor
Medium Power Amplifier
鈥?Complement to FJC2098
鈥?High Collector Current
鈥?Low Collector-Emitter Saturation Voltage
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
=-50碌A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50碌A, I
C
=0
V
CB
=-20V, V
B
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-0.5A
I
C
=-4, I
B
=-0.1A
I
C
=-4, I
B
=-0.1A
80
Min.
-30
-20
-6
-0.5
-0.5
390
-1.0
-1.5
V
V
Typ.
Max.
Units
V
V
V
碌A
碌A
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jA
Parameter
Thermal Resistance, Junction to Ambient
Max
250
Units
擄C/W
h
FE
Classification
Classification
h
FE
P
80 ~ 180
Marking
Q
120 ~ 270
R
180 ~ 390
FAP
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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