FJAF6920
FJAF6920
High Voltage Color Display Horizontal
Deflection Output
鈥?High Collector-Base Breakdown Voltage : BV
CBO
= 1700V
鈥?Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
鈥?For Color Monitor
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Rating
1700
800
6
20
30
60
150
-55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
* Pulse Test: PW=300碌s, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
STG
*
t
F
*
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500碌A(chǔ), I
E
=0
I
C
=5mA, I
B
=0
I
E
=500碌A(chǔ), I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=11A
I
C
=11A, I
B
=2.75A
I
C
=11A, I
B
=2.75A
V
CC
=200V, I
C
=10A, R
L
=20
鈩?/div>
I
B1
=2.0A, I
B2
= - 4.0A
0.15
1700
800
6
8
5.5
8.5
3
1.5
3
0.2
V
V
碌s
碌s
Min.
Typ.
Max.
1
10
1
Units
mA
碌A(chǔ)
mA
V
V
V
* Pulse Test: PW=20碌s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A, September2002
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