鈥?/div>
High Collector-Base Breakdown Voltage : BV
CBO
= 1700V
Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
High Switching Speed : t
F
(typ.) =0.15碌s
For Color Monitor
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Rating
1700
800
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
STG
*
t
F
*
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500碌A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500碌A, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=6A
I
C
=6A, I
B
=1.5A
I
C
=6A, I
B
=1.5A
V
CC
=200V, I
C
=6A, R
L
=33
鈩?/div>
I
B1
=1.2A, I
B2
= - 2.4A
1700
800
6
10
7
10
3
1.5
4
0.3
V
V
碌s
碌s
Min
Typ
Max
1
10
1
Units
mA
碌A
mA
V
V
V
* Pulse Test: PW=20碌s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
1
2
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