FID 36-06D
IGBT Chopper
in ISOPLUS i4-PAC
TM
I
C25
= 38 A
= 600 V
V
CES
V
CE(sat) typ.
= 1.9 V
3
Preliminary data
4
1
1
2
5
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25擄C
T
C
= 90擄C
V
GE
=
鹵
15 V; R
G
= 10
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= V
CES
; V
GE
=
鹵
15 V; R
G
= 10
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
600
鹵
20
38
24
110
V
CES
10
125
V
V
A
A
A
碌s
W
Features
鈥?NPT IGBT
- low saturation voltage with positive
temperature coefficient
- low switching losses
- wide safe operating area
鈥?HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
鈥?medium frequency power supplies
- boost chopper for power factor
correction
- transformer primary switch
鈥?drives: supply of
- switched reluctance machines
- armature or excitation winding of
DC machines
- excitation winding of synchronous
machines
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
1.9
2.2
3
0.04
200
30
50
320
70
1.1
0.6
1.6
140
2.0
2.4
5
0.04
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
1.0 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 0.7 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 300 V; I
C
= 25 A
V
GE
= 鹵15 V; R
G
= 10
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 15 A
with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
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