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FHF1 Datasheet

  • FHF1

  • High Dynamic Range FET

  • 4頁

  • ETC

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High Dynamic Range FET
FHF1
The Communications Edge
鈩?/div>
Advanced Product Information
Product Features
鈥?/div>
3000-6000 MHz Bandwidth
鈥?/div>
+
39 dBm Output IP3
鈥?/div>
2.4 dB Noise Figure
鈥?/div>
+
21 dBm P1dB
鈥?/div>
Single or Dual Supply Operation
鈥?/div>
MTBF >100 Years
鈥?/div>
SOT-89 SMT Package
Actual Size
Product Description
The FHF1 is a high dynamic range FET pack-
aged in a low cost surface mount package. The
combination of low noise figure and high out-
put IP3 at the same bias point makes it ideal for
receiver and transmitter applications. The
FHF1 achieves +39 dBm OIP3 at a mounting
temperature of 85藲C with an associated MTBF
of >100 years
6
. The package is a SOT-89. All
devices are 100% RF and DC tested.
The product is targeted for applications where
high linearity is required.
Functional Diagram
4
1
2
3
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter
Saturated Drain Current, Idss
Transconductance, Gm
Pinch Off Voltage, Vp
RF Parameter
Small Signal Gain, Gss
Maximum Stable Gain, Gmsg
Third Order Output Intercept, OIP3
1 dB Compression Point, P1dB
Noise Figure, NF
Units
mA
mS
V
Units
dB
dB
dBm
dBm
dB
Minimum
100
-3.0
Minimum
10
+37
Typical
140
120
-1.5
Typical
12
17
+39
+21
2.4
Maximum
170
Vgs = 0 V
Ids = 0.6 mA
Maximum
Condition
Condition
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25擄C with Vds = 5.0 V, Vgs = 0 V, test frequency = 3000 MHz, 50
鈩?/div>
system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40擄C is +36 dBm.
4. Idss is measured with Vgs = 0 V.
5. Pinch off voltage is measured when Ids = 0.6 mA.
6. MTBF calculated with channel temperature at 155藲C.
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Storage Temperature
RF Input Power (continuous)
Rating
8.0 V
-6.0 V
4.5 mA
-55 to +125擄C
+10 dBm
Ordering Information
Part No.
FHF1
Description
High Dynamic Range FET
(Available in tape and reel)
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc.
鈥?Phone: 1-800-WJ1-4401 鈥?FAX: 408-577-6620 鈥?e-mail: sales@wj.com 鈥?Web site: www.wj.com
February 2002

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  • 英文版
    High Dynamic Range FET
    ETC
  • 英文版
    High Dynamic Range FET
    ETC [ETC]

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