Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp,
Differential Amp Applications
Features
Package Dimensions
鈥?Composite type with 2 transistors contained in the MCP
unit: mm
package currently in use, improving the mounting
2149-MCP6
efficiency greatly.
鈥?The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
鈥?Optimal for differential amplification due to excellent
6
thermal equilibrium and pair capability.
1
0.65
2.0
[FH102]
5
4
0
鈥?/div>
0.1
1.25
2.1
0.2
0.25
0.425
0.15
2
3
0.425
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
Ratings
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0.2
0.9
Mounted on ceramic board
(250mm
2
脳0.8mm),
1unit
Mounted on ceramic board
(250mm
2
脳0.8mm)
20
10
2
70
300
500
150
鈥?5 to +150
Unit
V
V
V
mA
mW
mW
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
hFE(small/large)
VBE(small-large)
fT
Cob
Cre
Conditions
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
min
typ
max
1.0
10
200
Unit
碌A(chǔ)
碌A(chǔ)
90
0.7
0.95
1.0
7
0.75
0.5
mV
GHz
pF
pF
5
1.2
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
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