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SOT-89 SMT Package
Actual Size
Product Description
The FH101 is a high dynamic range FET packaged
in a low cost surface mount package. The device is
available in both the standard SOT-89 package
and the environmentally friendly lead-free and
鈥済reen鈥?SOT-89 package. The combination of low
noise figure and high output IP3 at the same bias
point makes it ideal for receiver and transmitter
applications. The FH101 achieves +36 dBm OIP3
at a mounting temperature of 85擄C with an associ-
ated MTBF of >100 years. The package is a SOT-
89. All devices are 100% RF and DC tested.
The product is targeted for applications where high
linearity is required.
Functional Diagram
4
1
2
3
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter Units
Saturated Drain Current, Idss mA
Transconductance, Gm
Pinch Off Voltage, Vp
RF Parameter
Small Signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3
Output P1dB
Noise Figure, NF
7
mS
V
Units
dB
dB
dBm
dBm
dB
32
-3.0
Min.
17
Min.
100
Typical Max.
140
120
-1.5
Typical Max.
18
23
36
18
1.2
170
Typical Parameters
Parameter
Frequency
S21
S11
S22
Output IP3
Output P1dB
Noise Figure
Drain Bias Supply
Gate Bias
Units
MHz
dB
dB
dB
dBm
dBm
dB
900
19.0
-10.7
-9.7
+38.0
+18.8
2.7
5 V @ 140 mA
0V
Typical
1900
16.0
-12.3
-17.2
+33.6
+19.1
3.1
Typical parameters reflect performance in an application circuit.
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25擄C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Device needs appropriate match to become unconditionally stable.
4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40擄C is +36 dBm.
5. Idss is measured with Vgs = 0 V.
6. Pinch off voltage is measured when Ids = 0.6 mA.
7. Measured with Vds = 3.3 V, 50% Idss.
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Operating Case Temperature
Storage Temperature
Input RF Power (continuous)
Rating
+6.0 V
-6.0 V
4.5 mA
-40 to +85擄C
-55 to +125擄C
+10 dBm
Ordering Information
Part No.
FH101
FH101-G
Description
High Dynamic Range FET (leaded)
1
High Dynamic Range FET (lead-free)
2
1 Product may contain lead-bearing materials. Maximum +235擄C reflow temperature.
2 Product does not contain lead-bearing materials. Maximum +260擄C reflow temperature. Also
compatible with leaded soldering process.
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc.
鈥?Phone: 1-800-WJ1-4401 鈥?FAX: 408-577-6620 鈥?e-mail: sales@wj.com 鈥?Web site: www.wj.com
April 2004
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