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FGW15N40A Strobe Flash N-Channel Logic Level IGBT

August 2005

FGW15N40A

Strobe Flash N-Channel Logic Level IGBT

Features

V

CE(SAT)

= 4.4V at I

C

=150A

t

fl

= 1.1碌s, td

(OFF)I

= 0.46碌s

2kV ESD Protected

High Peak Current Density

TSSOP - 8 package, small footprint, low profile

(1mm thick)

General Description

This N-Channel IGBT is a MOS gated, logic level device

which has been especially tailored for camera flash applica-

tions where board space is a premium. These devices have

been designed to offer exceptional power dissipation in a

very small footprint for applications where bigger, more ex-

pensive packages are impractical. The gate is ESD protect-

ed with a zener diode.

Applications

Camera Strobe

Internal Diagram

4

E

E

E

G

C

C

C

C

Pin 1

5

6

7

8

3

2

1

TSSOP-8

漏2005 Fairchild Semiconductor Corporation

FGW15N40A Rev. A2

1

www.fairchildsemi.com

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FGW15N40A相關(guān)型號(hào)PDF文件下載

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  Strobe Flash N-Channel Logic Level IGBT
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• FGW15N40A
  英文版
  Strobe Flash N-Channel Logic Level IGBT
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