PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6

FGS15N40L

September 2001

IGBT

FGS15N40L

General Description

Insulated Gate Bipolar Transistors(IGBTs) with trench

gate structure have superior performance in conductance

and switching to planar gate structure and also have wide

noise immunity. These devices are well suitable for

strobe application

Features

鈥?High Input Impedance

鈥?High Peak Current Capability (130A)

鈥?Easy Gate Drive

Application

鈥?Strobe Flash

C

C

C

C

G

E

C

E

E

G

E

8-SOP

Absolute Maximum Ratings

Symbol

V

CES

V

GES

I

CM (1)

P

C

T

J

T

stg

T

L

T

C

= 25擄C unless otherrwise noted

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

Pulsed Collector Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

PurPoses from case for 5 secnds

@ T

a

= 25擄C

FGS15N40L

400

鹵

6

130

2.0

-40 to +150

-40 to +150

300

Units

V

V

A

W

擄C

擄C

擄C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

R

胃JA

Parameter

Thermal Resistance, Junction-to-Ambient(PCB Mount)

Typ.

--

Max.

62.5

Units

擄C/W

Notes: Mounted on 1鈥?square PCB(FR4 or G-10 Material)

漏2001 Fairchild Semiconductor Corporation

FGS15N40L Rev. A1

next

FGS15N40L相關(guān)型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• FGS15N40L
  英文版
  Electrical Characteristics of IGBT
  FAIRCHILD
  FGS15N40L
• FGS15N40L
  英文版
  Electrical Characteristics of IGBT
  FAIRCHILD ...
  FGS15N40L

您可能感興趣的PDF文件資料

• FGS15N40L
• FGS15N40L

熱門IC型號推薦

• FFPF08S60Sntu
• FZT651
• FDS4435BZ
• FDPF18N50
• FDC6420C-NL
• FPF2165R
• FDC637AN
• FDS9926A
• FMMT489TA
• FMC2A
• FDN337N
• FM25CL64B-GTR