FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
May 2006
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
鈥?High speed switching
鈥?Low saturation voltage : V
CE(sat)
= 1.95 V @ I
C
= 7A
鈥?High input impedance
鈥?CO-PAK, IGBT with FRD : t
rr
= 50 ns (typ.)
鈥?Short Circuit rated
tm
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
low conduction and switching losses.The device is designed for
Motor applications where ruggedness is a required feature.
C
G
1
TO-220F
1.Gate 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8鈥?from case for 5 seconds
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
FGP7N60RUFD
600
鹵
20
14
7
21
12
60
41
16
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
擄C
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
胃JC
(DIODE)
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
3.0
4.2
62.5
Units
擄C/W
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF7N60RUFD Rev. A