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FGP30N6S2 Datasheet

  • FGP30N6S2

  • 600V, SMPS II Series N-Channel IGBT

  • 8頁(yè)

  • FAIRCHILD

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FGH30N6S2 / FGP30N6S2 / FGB30N6S2
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 14A
鈥?200kHZ Operation at 390V, 9A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
鈥?Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
Symbol
C
TO-220AB
E
C
G
TO-263AB
G
G
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
T
STG
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 20A, L = 1.3mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Storage Junction Temperature Range
Ratings
600
45
20
108
鹵20
鹵30
60A at 600V
150
167
1.33
-55 to 150
-55 to 150
mJ
W
W/擄C
擄C
擄C
Units
V
A
A
A
V
V
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

FGP30N6S2 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.5V @ 15V，12A

  • 45A

  • 167W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • FGP30N6S2_NLFGP30N6S2_NL-ND

FGP30N6S2相關(guān)型號(hào)PDF文件下載

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