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High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 5.0 V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
G
TO-264
G
C
E
T
C
= 25擄C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
FGL60N170D
1700
鹵
25
60
30
180
15
150
200
80
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
擄C
擄C
擄C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
R
胃JC
(DIODE)
R
胃A
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.625
0.83
25
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B