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FGL60N100BNTD Datasheet

  • FGL60N100BNTD

  • NPT-Trench IGBT

  • 7頁

  • FAIRCHILD

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FGL60N100BNTD
IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
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鈥?/div>
鈥?/div>
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High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.5 V @ I
C
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
C
G
TO-264
G
C
E
T
C
= 25擄C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8鈥?from case for 5 seconds
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
FGL60N100BNTD
1000
鹵
25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
擄C
擄C
擄C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
R
胃JC
(DIODE)
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.69
2.08
25
Units
擄C/W
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A

FGL60N100BNTD 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • NPT 和溝道

  • 1000V

  • 2.9V @ 15V，60A

  • 60A

  • 180W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264

  • 管件

  • FGL60N100BNTD-NDFGL60N100BNTDFS

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