FGL40N120AND 1200V NPT IGBT
February 2005
FGL40N120AND
1200V NPT IGBT
Features
鈥?High speed switching
鈥?Low saturation voltage : V
CE(sat)
= 2.6 V @ I
C
= 40A
鈥?High input impedance
鈥?CO-PAK, IGBT with FRD : t
rr
= 75ns (typ.)
Description
Employing NPT technology, Fairchild鈥檚 AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
C
G
TO-264
G C
E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM(1)
I
F
I
FM
P
D
SCWT
T
J
T
STG
T
L
Notes:
(1) Pulse width limited by max. junction temperature
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
V
CE
= 600V, V
GE
= 15V, T
C
= 125擄C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from Case for 5 seconds
@T
C
= 25擄C
@T
C
= 100擄C
@T
C
= 100擄C
@T
C
= 25擄C
@T
C
= 100擄C
FGL40N120AND
1200
鹵25
64
40
120
40
240
500
200
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
碌s
擄C
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
R
胃JC
(DIODE)
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
Typ.
--
--
--
Max.
0.25
0.7
25
Units
擄C/W
擄C/W
擄C/W
www.fairchildsemi.com
漏2005 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A