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FGK60N6S2D Datasheet

  • FGK60N6S2D

  • 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Steal...

  • 9頁

  • FAIRCHILD

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FGK60N6S2D
June 2002
FGK60N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGK60N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 52A
鈥?200kHZ Operation at 390V, 31A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . 140nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
鈥?Low Conduction Loss
IGBT formerly Developmental Type TA49346
Diode formerly Developmental Type TA49393
Package
JEDEC STYLE STRETCH TO-247
E
C
G
Symbol
C
G
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 30A, L = 1mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Ratings
600
75
75
320
鹵20
鹵30
200A at 600V
700
625
5
-55 to 150
mJ
W
W/擄C
擄C
Units
V
A
A
A
V
V
Storage Junction Temperature Range
-55 to 150
擄C
T
STG
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1

FGK60N6S2D 產(chǎn)品屬性

  • Fairchild Semiconductor

  • Single

  • 600 V

  • +/- 20 V

  • + 150 C

  • TO-247-3

  • Tube

  • 75 A

  • - 55 C

  • Through Hole

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  • 英文版
    600V, SMPS II Series N-Channel IGBT with Anti-Parallel Steal...
    FAIRCHILD
  • 英文版
    600V, SMPS II Series N-Channel IGBT with Anti-Parallel Steal...
    FAIRCHILD ...

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