FGH50N3
July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
Formerly Developmental Type TA49485
Features
鈥?Low V
CE(SAT)
. . . . . . . . . . . . . . . . . . . < 1.4V max
鈥?Low E
OFF
. . . . . . . . . . . . . . . . . . . . . . . . . < 200碌J
鈥?SCWT (@ T
J
= 125擄C). . . . . . . . . . . . . . . . . > 8碌s
鈥?300V Switching SOA Capability
鈥?Positive V
CE(SAT)
Temperature Coefficient above
50A
Package
E
C
G
Symbol
C
TO-247
COLLECTOR
(FLANGE)
G
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
E
ARV
P
D
T
J
T
STG
t
SC
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Single Pulse Avalanche Energy, I
CE
= 30A, L = 1.78mH, V
DD
= 50V
Single Pulse Reverse Avalanche Energy, I
EC
= 30A, L = 1.78mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Storage Junction Temperature Range
Short Circuit Withstand Time (Note 2)
Ratings
300
75
75
240
鹵20
鹵30
150A at 300V
800
800
463
3.7
-55 to 150
-55 to 150
8
mJ
mJ
W
W/擄C
擄C
擄C
碌s
Units
V
A
A
A
V
V
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 180V, T
J
= 125擄C, V
GE
= 12Vdc, R
G
= 5
鈩?/div>
漏2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A
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