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FGH20N6S2D Datasheet

  • FGH20N6S2D

  • 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Steal...

  • 9頁(yè)

  • FAIRCHILD

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FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 7A
鈥?200kHZ Operation at 390V, 5A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
鈥?Low Conduction Loss
鈥?Low E
on
鈥?Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
TO-247
E
C
G
Symbol
C
TO-220AB
E
C
G
TO-263AB
G
G
E
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
COLLECTOR (FLANGE)
Ratings
600
28
13
40
鹵20
鹵30
35A at 600V
100
125
1.0
-55 to 150
Units
V
A
A
A
V
V
A
mJ
W
W/擄C
擄C
Storage Junction Temperature Range
-55 to 150
擄C
T
STG
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1

FGH20N6S2D 產(chǎn)品屬性

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.7V @ 15V，7A

  • 28A

  • 125W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-3P-3，SC-65-3

  • TO-247AD

  • 管件

  • FGH20N6S2D_NLFGH20N6S2D_NL-ND

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