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FGA25N120ANTD Datasheet

  • FGA25N120ANTD

  • 1200V NPT Trench IGBT

  • 9頁

  • FAIRCHILD

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FGA25N120ANTD 1200V NPT Trench IGBT
August 2005
FGA25N120ANTD
1200V NPT Trench IGBT
Features
鈥?NPT Trench Technology, Positive temperature coefficient
鈥?Low saturation voltage: V
CE(sat), typ
= 2.0V
@ I
C
= 25A and T
C
= 25擄C
鈥?Low switching loss: E
off, typ
= 0.96mJ
@ I
C
= 25A and T
C
= 25擄C
鈥?Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
C
G
G C E
TO-3P
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
D
T
J
T
stg
T
L
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
(Note 1)
Description
Collector-Emitter Voltage
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
FGA25N120ANTD
1200
鹵
20
50
25
75
25
150
312
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
擄C
擄C
擄C
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8鈥?from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.4
2.0
40
Units
擄C/W
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA25N120ANTD Rev. B

FGA25N120ANTD 產品屬性

  • 絕緣柵雙極型晶體管（IGBT）

  • 50A

  • 2.5V

  • 312W

  • 1.2kV

  • -55°C 到 +150°C

  • TO-3P

  • 3

  • No SVHC (18-Jun-2012)

  • 50ns

  • 312W

  • 312W

  • TO-3PN

  • ?頻道

  • 312W

  • 50A

  • 1.2kV

  • 25A

  • 75A

  • 通孔安裝

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