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FFH30US30DN Datasheet

  • FFH30US30DN

  • 30A, 300V Stealth Diode

  • 6頁

  • FAIRCHILD

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FFH30US30DN
June 2003
FFH30US30DN
30A, 300V Stealth鈩?Diode
General Description
The FFH30US30DN is a Stealth鈩?diode optimized for low
loss performance in output rectification. The Stealth鈩?family
exhibits low reverse recovery current (I
RM(REC)
), low V
F
and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower V
F
and I
RM(REC)
reduces diode losses.
Formerly developmental type TA49449
.
Features
鈥?Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 0.45
鈥?Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 50ns
鈥?High Operating Temperature . . . . . . . . . . . . . . . . 175
o
C
鈥?Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
鈥?Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
鈥?Switch Mode Power Supplies
鈥?Power Factor Correction
鈥?Uninterruptable Power Supplies
鈥?Motor Drives
鈥?/div>
Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2
CATHODE
ANODE 1
Symbol
K
CATHODE
(BOTTOM SIDE
METAL)
A1
A2
Device Maximum Ratings (per leg)
T
C
= 25擄C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 160 C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
o
Ratings
300
300
300
30
60
70
325
230
20
-55 to 175
300
260
Units
V
V
V
A
A
A
A
W
mJ
擄C
擄C
擄C
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1

FFH30US30DN 產(chǎn)品屬性

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • 二極管,整流器 - 陣列

  • Stealth™

  • 1V @ 30A

  • 100µA @ 300V

  • 30A

  • 300V

  • 55ns

  • 標準

  • 快速恢復(fù) = 200mA(Io)

  • 1 對共陰極

  • 通孔

  • TO-3P-3,SC-65-3

  • TO-247AD

  • 管件

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