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FFB5551 Datasheet

  • FFB5551

  • Dual-Chip NPN General Purpose Amplifier

  • 113.76KB

  • 5頁(yè)

  • FAIRCHILD

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FFB5551
FFB5551
Dual-Chip NPN General Purpose Amplifier
鈥?This device is deisgned for general purpose high voltage amplifiers.
鈥?E1 is Pin 1.
C1
E2
B2
C2
B1
E1
SC70-6
Mark: .P1
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
160
180
6.0
200
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100擄C
V
EB
= 4.0V, I
C
= 0
V
CE
= 5.0V, I
C
= 1.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 5.0V, I
C
= 50mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CE
= 10V, I
C
= 10mA
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
100
80
80
30
Min.
160
180
6.0
50
50
50
Max.
Units
V
V
V
nA
碌A(chǔ)
nA
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics *
250
0.15
0.20
1.0
1.0
300
6.0
V
V
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
f
T
C
obo
Current gain Bandwidth Product
Output Capacitance
MHz
pF
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2003 Fairchild Semiconductor Corporation
Rev. A, June 2003

FFB5551 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 陣列

  • -

  • 2 NPN（雙）

  • 200mA

  • 160V

  • 200mV @ 5mA，50mA

  • -

  • 80 @ 10mA，5V

  • 200mW

  • 300MHz

  • 表面貼裝

  • 6-TSSOP，SC-88，SOT-363

  • SC-70-6

  • 帶卷 (TR)

  • FFB5551-NDFFB5551TR

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