錚?/div>
-6
Mark: .002
Dot denotes pin #1
E2
pin #1
B1
NPN & PNP General Purpose Amplifier
This complementary device is designed for use as a general purpose
amplifier and switch The useful dynamic range extends to 100 mA as a
switch and 100 MHz as an amplifier. Sourced from Process 23 and 66.
See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25擄C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
擄C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
FFB3946
300
2.4
415
Max
FMB3946
700
5.6
180
Units
mW
mW/擄C
擄C/W
錚?/div>
1999 Fairchild Semiconductor Corporation
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