錚?/div>
-6
Mark: .001
Dot denotes pin #1
E2
pin #1
B1
NPN & PNP General Purpose Amplifier
This complementary device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced from Process
19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25擄C unless otherwise noted
Parameter
Value
30
60
5.0
500
-55 to +150
Units
V
V
V
mA
擄C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
FFB2227A
300
2.4
415
Max
FMB2227A
700
5.6
180
Units
mW
mW/擄C
擄C/W
錚?/div>
1998 Fairchild Semiconductor Corporation
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