FF1N30HS60DD
May 2003
FF1N30HS60DD
30A, 600V Stealth鈩?Diode
General Description
The FF1N30HS60DD is a Stealth鈩?diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth鈩?family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth鈩?diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49411
.
Features
鈥?Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 1.2
鈥?Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 35ns
鈥?Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
鈥?Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
鈥?Fully Isolated Package (2,500 volt AC)
鈥?Extremely Low Switching Losses
鈥?Avalanche Energy Rated
Applications
鈥?Switch Mode Power Supplies
鈥?Hard Switched CCM PFC Boost Diode
鈥?UPS and Motor Drive Free Wheeling Diode
鈥?SMPS FWD
鈥?Snubber Diode
Package
JEDEC SOT-227
Symbol
K
K
A
A
Device Maximum Ratings
(per diode)
T
C
= 25擄C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
M
d
T
L
T
PKG
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
=
110
o
C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Mounting force
Terminal connection torque
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Ratings
600
600
600
30
70
325
136
20
-55 to 175
1.5/13
1.5/13
300
260
Units
V
V
V
A
A
A
W
mJ
擄C
Nm/lb.in.
Nm/lb.in.
擄C
擄C
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2003 Fairchild Semiconductor Corporation
FFH1N30HS60DD RevA
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