FDZ7064S
May 2004
FDZ7064S
30V N-Channel PowerTrench SyncFET
TM
BGA MOSFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power
supplies. Combining Fairchild鈥檚 30V PowerTrench
SyncFET process with state of the art BGA packaging, the
FDZ7064S minimizes both PCB space and R
DS(ON)
. This
BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device
to combine excellent thermal transfer characteristics, high
current handling capability, ultra-low profile packaging, low
gate charge, ultra-low reverse recovery charge and low
R
DS(ON)
.
聽
Features
鈥?/div>
13.5 A, 30 V. R
DS(ON)
= 7 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 9 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Occupies only 14 mm
2
of PCB area. Only 42% of the
area of SO-8
鈥?/div>
Ultra-thin package: less than 0.8 mm height when
mounted to PCB
鈥?/div>
3.5 x 4 mm
2
Footprint
鈥?/div>
High power and current handling capability.
D
Applications
鈥?/div>
DC/DC converters
D
D
D
D
D
S
S
S
G
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
Pin 1
F7064S
G
Pin 1
D
S
Bottom
Top
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
(Note 1a)
鈥?Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Ratings
30
鹵16
13.5
60
2.2
鈥?5 to +150
Units
V
V
A
W
擄C
Thermal Characteristics
婁 攏隆
壟
樓 攏隆
壟
隴 攏隆
壟
R
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
56
4.5
0.6
擄C/W
Package Marking and Ordering Information
Device Marking
7064S
Device
FDZ7064S
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
3000
漏
2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)
FDZ7064S 產(chǎn)品屬性
Fairchild Semiconductor
N-Channel
30 V
+/- 16 V
13.5 A
0.0072 Ohms
Single
+ 150 C
SMD/SMT
BGA-30
Reel
18 ns
- 55 C
2.2 W
12 ns
3000
50 ns
FDZ7064S相關(guān)型號PDF文件下載
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型號
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