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FDZ7064N Datasheet

  • FDZ7064N

  • 30V N-Channel Logic Level PowerTrench BGA MOSFET

  • 6頁(yè)

  • FAIRCHILD

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FDZ7064N
May 2004
General Description
Combining Fairchild鈥檚 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and R
DS(ON)
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
鈥?/div>
DC/DC converters
鈥?/div>
Solenoid drive
Pin 1
D
D
D
D
D
S
S
S
G
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
Pin 1
D
Bottom
Top
T
A
=25 C unless otherwise noted
o
Absolute Maximum Ratings
V
DSS
V
GSS
I
D
Symbol
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
(Note 1a)
鈥?Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Parameter
Thermal Characteristics
R
JA
R
JB
R
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
7064N
Device
FDZ7064N
Reel Size
13鈥?/div>
2004 Fairchild Semiconductor Corporation
FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
Features
鈥?/div>
13.5 A, 30 V. R
DS(ON)
= 8.0 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 7.0 m鈩?@ V
GS
= 10 V
鈥?/div>
Occupies only 14 mm
2
of PCB area. Only 42% of
the area of SO-8
鈥?/div>
Ultra-thin package: less than 0.8 mm height when
mounted to PCB
鈥?/div>
3.5 x 4 mm
2
Footprint
鈥?/div>
High power and current handling capability.
D
F7064
Ratings
56
4.5
0.6
Tape width
12mm
G
S
30
鹵12
13.5
60
2.2
鈥?5 to +150
Units
V
V
A
W
擄C
擄C/W
Quantity
3000
FDZ7064N Rev.D4 (W)

FDZ7064N 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 30V

  • 13.5A

  • 7 毫歐 @ 14.5A,10V

  • 2V @ 250µA

  • 43nC @ 4.5V

  • 3843pF @ 15V

  • 2.2W

  • 表面貼裝

  • 30-WFBGA

  • 30-BGA(4x3.5)

  • 帶卷 (TR)

FDZ7064N相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    描述
    廠商
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