鈻?/div>
Occupies only 14 mm
2
of PCB area. Only 42% of the area of
SO-8
General Description
This MOSFET is designed to replace a single MOSFET and
parallel Schottky diode in synchronous DC:DC power supplies.
Combining Fairchild鈥檚 30V PowerTrench SyncFET process with
state of the art BGA packaging, the FDZ7064AS minimizes both
PCB space and R
DS(ON)
. This BGA SyncFET embodies a
breakthrough in both packaging and power MOSFET integration
which enables the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-low pro鏗乴e
packaging, low gate charge, ultra-low reverse recovery charge
and low R
DS(ON)
.
鈻?/div>
Ultra-thin package: less than 0.76 mm height when mounted
to PCB
鈻?/div>
3.5 x 4 mm
2
Footprint
鈻?/div>
High power and current handling capability.
Applications
鈻?/div>
DC/DC converters
Pin 1
D
D
D
D
D
D
F7064AS
D
S
S
S
G
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
G
Pin 1
S
Bottom
Top
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
Parameter
Ratings
30
鹵
20
13.5
60
2.2
鈥?5 to +150
Units
V
V
A
W
擄
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
R
胃
JB
R
胃
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Ball
(Note 1)
Thermal Resistance, Junction-to-Case
(Note 1)
56
4.5
0.6
擄
C/W
Package Marking and Ordering Information
Device Marking
7064AS
Device
FDZ7064AS
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
3000
漏2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDZ7064AS Rev. A
FDZ7064AS 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
13.5A
5.6 毫歐 @ 13.5A，10V
3V @ 1mA
51nC @ 10V
1960pF @ 15V
2.2W
表面貼裝
30-WFBGA
30-BGA（4x3.5）
帶卷 (TR)
FDZ7064AS相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
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