FDZ5047N Datasheet

IC型號(hào)：
FDZ5047N
PDF描述：
30V N-Channel Logic Level PowerTrench BGA MOSFET
文件大?。?/label>
212.59KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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FDZ5047N

January 2004

FDZ5047N

30V N-Channel Logic Level PowerTrench

餂?/div>

BGA MOSFET

General Description

Combining Fairchild鈥檚 30V PowerTrench process with

state of the art BGA packaging, the FDZ5047N

minimizes both PCB space and R

DS(ON)

. This BGA

MOSFET embodies a breakthrough in packaging

technology which enables the device to combine

excellent thermal transfer characteristics, high current

handling capability, ultra-low profile packaging, low gate

charge, and low R

DS(ON)

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications resulting in DC/DC power supply

designs with higher overall efficiency.

Features

鈥?/div>

22 A, 30 V.

DS(ON)

= 2.9 m鈩?@ V

= 10 V

DS(ON)

= 4.5 m鈩?@ V

= 4.5 V

鈥?/div>

Occupies only 27.5 mm of PCB area:

1/5 of the area of a TO-220 package

鈥?/div>

Ultra-thin package: less than 0.90 mm height when

mounted to PCB

鈥?/div>

Outstanding thermal transfer characteristics

鈥?/div>

Ultra-low gate charge x R

DS(ON)

product

Applications

鈥?/div>

DC/DC converters

鈥?/div>

Solenoid drive

Pin 1

F50 4 7

Pin 1

Bottom

Top

=25 C unless otherwise noted

Absolute Maximum Ratings

Symbol

DSS

GSS

, T

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

Parameter

Ratings

鹵20

(Note 1a)

Units

擄C

2.8

鈥?0 to +150

Total Power Dissipation @ T

= 25擄C

Operating and Storage Junction Temperature Range

Thermal Characteristics

胃JA

胃JB

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

2.7

0.3

擄C/W

Package Marking and Ordering Information

Device Marking

5047N

餂?004

Fairchild Semiconductor Corporation.

Device

FDZ5047N

Reel Size

13鈥欌€?/div>

Tape width

12mm

Quantity

3000 units

FDZ5047N Rev D4 (W)

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
22A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
2.9 毫歐 @ 22A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
73nC @ 5V
輸入電容 (Ciss) @ Vds
4993pF @ 15V
功率 - 最大
2.8W
安裝類型
表面貼裝
封裝/外殼
36-VFBGA
供應(yīng)商設(shè)備封裝
36-BGA（5.5x5）
包裝
帶卷 (TR)

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30V N-Channel Logic Level PowerTrench BGA MOSFET

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