FDZ299P
February 2004
FDZ299P
P-Channel 2.5 V Specified PowerTrench
廬
BGA MOSFET
General Description
Combining Fairchild鈥檚 advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ299P minimizes both PCB space
and R
DS(ON)
.
This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Features
鈥?/div>
鈥?.6 A, 鈥?0 V
R
DS(ON)
= 55 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 80 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
鈥?/div>
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
鈥?/div>
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
鈥?/div>
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
鈥?/div>
High power and current handling capability.
Applications
鈥?/div>
Battery management
鈥?/div>
Load switch
鈥?/div>
Battery protection
S
B
G
Bottom
Top
T
A
=25
o
C unless otherwise noted
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
鈥?0
鹵12
(Note 1a)
Units
V
V
A
W
擄C
鈥?.6
鈥?0
1.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
擄C/W
Package Marking and Ordering Information
Device Marking
B
Device
FDZ299P
Reel Size
7鈥?/div>
Tape width
8mm
Quantity
3000 units
漏
2004 Fairchild Semiconductor Corporation
FDZ299P Rev C6 (W)
FDZ299P相關(guān)型號PDF文件下載
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型號
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英文版
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