FDZ294N
July 2005
FDZ294N
N-Channel 2.5 V Specified PowerTrench
廬
BGA MOSFET
General Description
Combining Fairchild鈥檚 advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ294N minimizes both PCB space
This BGA MOSFET embodies a
and R
DS(ON)
.
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Features
鈥?/div>
6 A, 20 V
R
DS(ON)
= 23 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 34 m鈩?@ V
GS
= 2.5 V
鈥?/div>
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
鈥?/div>
Ultra-thin package: less than 0.85mm height when
mounted to PCB
鈥?/div>
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
鈥?/div>
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
鈥?/div>
High power and current handling capability.
Applications
鈥?/div>
Battery management
鈥?/div>
Battery protection
D
GATE
G
Index
slot
Bottom
S
Top
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
Parameter
Ratings
20
鹵12
(Note 1a)
Units
V
V
A
W
擄C
6
10
1.7
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
擄C/W
Package Marking and Ordering Information
Device Marking
E
漏2005
Fairchild Semiconductor Corporation
Device
FDZ294N
Reel Size
7鈥?/div>
Tape width
8mm
Quantity
3000 units
FDZ294N Rev. B3 (W)
FDZ294N 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
20V
6A
23 毫歐 @ 6A，4.5V
1.5V @ 250µA
10nC @ 4.5V
670pF @ 10V
1.7W
表面貼裝
9-WFBGA
9-BGA
帶卷 (TR)
FDZ294N-ND
FDZ294N相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
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英文版
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FAIRCHILD
-
英文版
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FAIRCHILD ...
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英文版
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英文版
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英文版
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