鈩?/div>
@ V
GS
= 鈥?.5 V
I
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
I
Ultra-thin package: less than 0.85 mm height when mounted
to PCB
I
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
I
Ultra-low Q
g
x R
DS(ON)
鏗乬ure-of-merit
I
High power and current handling capability.
Applications
I
Battery management
I
Load switch
I
Battery protection
General Description
Combining Fairchild鈥檚 advanced 2.5V speci鏗乪d PowerTrench
process with state of the art BGA packaging, the FDZ293P min-
imizes both PCB space and R
DS(ON)
. This BGA MOSFET
embodies a breakthrough in packaging technology which
enables the device to combine excellent thermal transfer char-
acteristics, high current handling capability, ultra-low pro鏗乴e
packaging, low gate charge, and low R
DS(ON)
.
S
GATE
G
D
Bottom
Top
漏2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDZ293P Rev. C