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FDZ2553NZ

July 2003

FDZ2553NZ

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

廬

BGA MOSFET

General Description

Combining Fairchild鈥檚 advanced 2.5V specified

PowerTrench process with state-of-the-art BGA

packaging, the FDZ2553N minimizes both PCB space

and R

DS(ON)

.

This common drain BGA MOSFET

embodies a breakthrough in packaging technology

which enables the device to combine excellent thermal

transfer characteristics, high current handling capability,

ultra-low profile packaging, low gate charge, and low

R

DS(ON)

.

Features

鈥?/div>

9.6 A, 20 V.

R

DS(ON)

= 14 m鈩?@ V

GS

= 4.5 V

R

DS(ON)

= 20 m鈩?@ V

GS

= 2.5 V

鈥?/div>

Occupies only 0.10 cm

2

of PCB area:

1/3 the area of SO-8.

鈥?/div>

Ultra-thin package: less than 0.70 mm height when

mounted to PCB.

鈥?/div>

ESD protection diode (note 3)

鈥?/div>

Outstanding thermal transfer characteristics:

significantly better than SO-8.

鈥?/div>

Ultra-low Q

g

x R

DS(ON)

figure-of-merit

鈥?/div>

High power and current handling capability

Applications

鈥?/div>

Battery management

鈥?/div>

Load switch

鈥?/div>

Battery protection

D

S

D

S

Pin 1

S

G

S

G

Q2

S

Q1

S

D

S

D

Pin 1

D

Bottom

Top

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

STG

T

A

=25 C unless other wise noted

o

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current 鈥?Continuous

(Note 1a)

鈥?Pulsed

Power Dissipation (Steady State)

(Note 1a)

Operating and Storage Junction Temperature Range

Ratings

20

鹵12

9.6

20

2.1

鈥?5 to +150

Units

V

A

W

擄C

擄C/W

Thermal Characteristics

R

胃JA

R

胃JB

R

胃J

C

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

60

6.3

0.6

Package Marking and Ordering Information

Device Marking

2553NZ

Device

FDZ2553NZ

Reel Size

7鈥欌€?/div>

Tape width

12mm

Quantity

3000 units

漏2003

Fairchild Semiconductor Corporation

FDZ2553NZ Rev C (W)

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
PowerTrench®
FET 型
2 個(gè) N 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
9.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
14 毫歐 @ 9.6A，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
18nC @ 5V
輸入電容 (Ciss) @ Vds
1240pF @ 10V
功率 - 最大
2.1W
安裝類型
表面貼裝
封裝/外殼
18-WFBGA
供應(yīng)商設(shè)備封裝
18-BGA
包裝
帶卷 (TR)

FDZ2553NZ相關(guān)型號(hào)PDF文件下載

型號(hào)

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描述

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FDZ2553NZ Datasheet

PDF預(yù)覽

FDZ2553NZ 產(chǎn)品屬性

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