FDZ203N
March 2003
FDZ203N
N-Channel 2.5V Specified PowerTrench
廬
BGA MOSFET
General Description
Combining Fairchild鈥檚 advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ203N minimizes both PCB space
and R
DS(ON)
.
This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Features
鈥?/div>
7.5 A, 20 V.
R
DS(ON)
= 18 m鈩?@ V
GS
= 4.5
R
DS(ON)
= 30 m鈩?@ V
GS
= 2.5 V
鈥?/div>
Occupies only 4 mm
2
of PCB area.
Less than 40% of the area of a SSOT-6
鈥?/div>
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
鈥?/div>
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
鈥?/div>
High power and current handling capability.
Applications
鈥?/div>
Battery management
鈥?/div>
Load switch
鈥?/div>
Battery protection
D
D
S
S
D
P in 1
S
F203N
F203N
S
G
S
S
G
Bottom
Top
T
A
=25
o
C unless otherwise noted
D
Absolute Maximum Ratings
V
DSS
V
GSS
I
D
Symbol
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current 鈥?Continuous
(Note 1a)
鈥?Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Parameter
20
鹵12
7.5
20
1.6
鈥?5 to +150
Ratings
Units
V
V
A
W
擄C
Thermal Characteristics
R
胃
JA
R
胃
JB
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
67
11
1
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
203N
Device
FDZ203N
Reel Size
7鈥欌€?/div>
Tape width
8mm
Quantity
3000 units
漏
2003 Fairchild Semiconductor Corporation
FDZ203N Rev. E2(W)
FDZ203N 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET N 通道，金屬氧化物
邏輯電平門
20V
7.5A
18 毫歐 @ 7.5A，4.5V
1.5V @ 250µA
15nC @ 4.5V
1127pF @ 10V
1.6W
表面貼裝
9-WFBGA
9-BGA
帶卷 (TR)
FDZ203N相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
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英文版
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