FDW9926NZ
January 2005
FDW9926NZ
Common Drain N-Channel 2.5V specified PowerTrench
廬
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor鈥檚 advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 鈥?10V).
Features
鈥?/div>
4.5 A, 20 V. R
DS(ON)
= 32 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 45 m鈩?@ V
GS
= 2.5 V
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
鈥?/div>
鈥?/div>
Applications
鈥?/div>
鈥?/div>
鈥?/div>
Battery protection
Load switch
Power management
鈥?/div>
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Total Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
鹵12
(Note 1a)
Units
V
V
A
W
擄C
4.5
30
1.6
1.1
鈥?5 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
77
114
擄C/W
Package Marking and Ordering Information
Device Marking
9926NZ
漏2005
Fairchild Semiconductor Corporation
Device
FDW9926NZ
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDW9926NZ Rev. D(W)
next
FDW9926NZ 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 陣列
PowerTrench®
2 個(gè) N 溝道(雙)
邏輯電平門
20V
4.5A
32 毫歐 @ 4.5A,4.5V
1.5V @ 250µA
8nC @ 4.5V
600pF @ 10V
1.1W
表面貼裝
8-TSSOP(0.173",4.40mm 寬)
8-TSSOP
帶卷 (TR)
FDW9926NZ相關(guān)型號(hào)PDF文件下載
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