FDW9926A
July 2003
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench
廬
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor鈥檚 advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 鈥?10V).
Features
鈥?/div>
4.5 A, 20 V.
R
DS(ON)
= 32 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 45 m鈩?@ V
GS
= 2.5 V
鈥?/div>
Optimized for use in battery circuit applications
鈥?/div>
Extended V
GSS
range (鹵10V) for battery applications
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
Low profile TSSOP-8 package
Applications
鈥?/div>
Battery protection
鈥?/div>
Load switch
鈥?/div>
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Total Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
鹵10
(Note 1a)
Units
V
V
A
W
擄C
4.5
30
1.0
0.6
鈥?5 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
擄C/W
Package Marking and Ordering Information
Device Marking
9926A
Device
FDW9926A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
3000 units
漏2003
Fairchild Semiconductor Corporation
FDW9926A Rev D (W)
FDW9926A 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 陣列
PowerTrench®
2 個 N 溝道（雙）
邏輯電平門
20V
4.5A
32 毫歐 @ 4.5A，4.5V
1.5V @ 250µA
9nC @ 4.5V
630pF @ 10V
600mW
表面貼裝
8-TSSOP（0.173"，4.40mm 寬）
8-TSSOP
帶卷 (TR)
FDW9926A相關(guān)型號PDF文件下載
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型號
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廠商
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英文版
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FAIRCHILD
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英文版
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英文版
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
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Common Drain N-Channel 2.5V specified PowerTrench MOSFET
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英文版
Dual N-Channel 2.5V Specified PowerTrench MOSFET
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