餂?/div>
MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor鈥檚 advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Features
鈥?/div>
鈥?.5 A, 鈥?0 V. R
DS(ON)
= 0.045
鈩?/div>
@ V
GS
= 鈥?.5 V
R
DS(ON)
= 0.075
鈩?/div>
@ V
GS
= 鈥?.5 V
鈥?/div>
V
F
< 0.55 V @ 1 A
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
Low profile TSSOP-8 package
Applications
鈥?/div>
DC/DC conversion
A
A
A
C
G
S
S
D
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
MOSFET Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
T
A
=25 C unless otherwise noted
o
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
(Note 1)
Ratings
鈥?/div>
20
鹵
12
Units
V
V
A
P
D
T
J
, T
STG
鈥?Pulsed
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
Operating and Storage Junction Temperature Range
鈥?/div>
3.5
鈥?/div>
30
1.2
1.0
-55 to +150
W
擄C
Schottky Maximum Ratings
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Current
20
1.5
30
V
A
A
Thermal Characteristics
R
胃JA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
擄C/W
Package Marking and Ordering Information
Device Marking
6923
Device
FDW6923
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
3000 units
餂?002
Fairchild Semiconductor International
FDW6923 Rev. D(W)
next
FDW6923 產(chǎn)品屬性
2,500
分離式半導(dǎo)體產(chǎn)品
FET - 單
PowerTrench®
MOSFET P 通道,金屬氧化物
邏輯電平門
20V
3.5A
45 毫歐 @ 3.5A,4.5V
1.5V @ 250µA
16nC @ 4.5V
1030pF @ 10V
1.2W
表面貼裝
8-TSSOP(0.173",4.40mm 寬)
8-TSSOP
帶卷 (TR)
FDW6923相關(guān)型號PDF文件下載
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英文版
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Di...
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P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Di...
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P-Channel 2.5V Specified PowerTrench剖 MOSFET with Schottky ...
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