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FDV301N Datasheet

  • FDV301N

  • Digital FET , N-Channel

  • 5頁

  • FAIRCHILD

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March 1999
FDV301N
Digital FET , N-Channel
General Description
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
Features
25 V, 0.22 A continuous, 0.5 A Peak.
R
DS(ON)
= 5
鈩?/div>
@ V
GS
= 2.7 V
R
DS(ON)
= 4
鈩?/div>
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
SOT-23
Mark:301
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
INVERTER APPLICATION
Vcc
D
D
OUT
IN
G
S
GND
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
FDV301N
Units
V
DSS
, V
CC
V
GSS
, V
I
I
D
, I
O
P
D
T
J
,T
STG
ESD
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, V
IN
Drain/Output Current
- Continuous
25
8
0.22
0.5
V
V
A
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
0.35
-55 to 150
6.0
W
擄C
kV
THERMAL CHARACTERISTICS
R
胃
JA
357
擄C/W
漏 1999 Fairchild Semiconductor Corporation
FDV301N Rev.F

FDV301N 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 25V

  • 220mA

  • 4 歐姆 @ 400mA，4.5V

  • 1.06V @ 250µA

  • 0.7nC @ 4.5V

  • 9.5pF @ 10V

  • 350mW

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23

  • 帶卷 (TR)

  • FDV301NTR

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