30V, 58A, 10m鈩?/div>
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
鈥?r
DS(ON)
= 10m鈩? V
GS
= 10V, I
D
= 35A
鈥?r
DS(ON)
= 13m鈩? V
GS
= 4.5V, I
D
= 35A
鈥?High performance trench technology for extremely low
r
DS(ON)
鈥?Low gate charge
Applications
鈥?DC/DC converters
鈥?High power and current handling capability
D
I-PAK
(TO-251AA)
G D S
G
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 4.5V) (Note 1)
V
GS
= 10V, with R
胃JA
=
52
o
C/W)
Continuous (T
amb
=
25
o
C,
58
51
13
Figure 4
53
55
0.37
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
30
鹵20
Units
V
V
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-251
Thermal Resistance Junction to Ambient TO-251
Thermal Resistance Junction to Ambient TO-251,
1in
2
copper pad area
2.73
100
52
o
o
C/W
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDU8880
FDU8880
漏2004 Fairchild Semiconductor Corporation
Device
FDU8880
FDU8880_NL (Note 3)
Package
TO-251AA
TO-251AA
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
75 units
75 units
FDU8880 Rev. B2