20V, 35A, 5.5m鈩?/div>
Features
General Description
Max r
DS(on)
=
5.5m鈩?at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
8.5m鈩?at V
GS
= 4.5V, I
D
= 33A
Low gate charge: Q
g(TOT)
= 34nC(Typ), V
GS
= 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
tm
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Application
D
G
G D S
I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
20
鹵20
35
93
354
144
77
-55 to 175
mJ
W
擄C
A
Units
V
V
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
1.94
100
52
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD8586
FDU8586
Device
FDD8586
FDU8586
Package
TO-252AA
TO-251AA
Reel Size
13鈥欌€?/div>
N/A(Tube)
Tape Width
12mm
N/A
Quantity
2500 units
75 units
漏2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
1
www.fairchildsemi.com
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