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FDU6N20 Datasheet

  • FDU6N20

  • N-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FDD6N20 / FDU6N20 N-Channel MOSFET
May 2007
FDD6N20 / FDU6N20
N-Channel MOSFET
200V, 4.5A, 0.8惟
Features
鈥?R
DS(on)
= 0.6惟 ( Typ. )@ V
GS
= 10V, I
D
= 2.3A
鈥?Low gate charge ( Typ. 4.7nC )
鈥?Low C
rss
( Typ. 6.3pF )
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?RoHS compliant
UniFET
TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
D
G
D-PAK
FDD Series
G
D S
I-PAK
FDU Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
200
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
4.5
2.7
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
18
60
4.5
4.0
4.5
40
0.32
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
3.1
110
Units
o
C/W
漏2007 Fairchild Semiconductor Corporation
FDD6N20 / FDU6N20 Rev. A
1
www.fairchildsemi.com

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