FDT459N Datasheet

IC型號：
FDT459N
PDF描述：
N-Channel Enhancement Mode Field Effect Transistor
文件大小：
92.18KB
PDF頁數(shù)：
4頁
芯片廠家：
FAIRCHILD

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March 1998

FDT459N

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance,

provide superior switching performance. These products are

well suited to low voltage, low current applications such as

notebook computer power management, battery powered

circuits, and DC motor control.

Features

6.5 A, 30 V. R

DS(ON)

= 0.035

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.055

鈩?/div>

@ V

= 4.5 V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

SuperSOT -3

SuperSOT -6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

= 25

C unless otherwise noted

FDT459N

鹵20

(Note 1a)

Units

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

6.5

1.3

1.1

-55 to 150

STG

胃

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

* Order option J23Z for cropped center drain lead.

漏 1998 Fairchild Semiconductor Corporation

FDT459NRev.C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
4,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6.5A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
35 毫歐 @ 6.5A，10V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
17nC @ 10V
輸入電容 (Ciss) @ Vds
365pF @ 15V
功率 - 最大
1.1W
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應(yīng)商設(shè)備封裝
SOT-223-3
包裝
帶卷 (TR)
其它名稱
FDT459N-NDFDT459NFSTR

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