FDT3612 Datasheet

IC型號(hào)：
FDT3612
PDF描述：
100V N-Channel PowerTrench MOSFET
文件大?。?/label>
109.87KB
PDF頁數(shù)：
5頁
芯片廠家：
FAIRCHILD

閱覽下載糾錯(cuò) 0

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

FDT3612

March 2001

FDT3612

100V N-Channel PowerTrench

餂?/div>

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications. The result is a MOSFET that is

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

Features

鈥?/div>

3.7 A, 100 V. R

DS(ON)

= 120 m鈩?@ V

= 10 V

DS(ON)

= 130 m鈩?@ V

= 6 V

鈥?/div>

Fast switching speed

鈥?/div>

Low gate charge (14nC typ)

鈥?/div>

High performance trench technology for extremely

low R

DS(ON)

鈥?/div>

High power and current handling capability in a

widely used surface mount package

Applications

鈥?/div>

DC/DC converter

鈥?/div>

Motor driving

SOT-223

(J23Z)

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

鈥?Continuous

鈥?Pulsed

Maximum Power Dissipation

=25

C unless otherwise noted

Parameter

Ratings

100

鹵20

(Note 1a)

Units

3.7

3.0

1.3

1.1

鈥?5 to +150

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range

擄C

Thermal Characteristics

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

Package Marking and Ordering Information

Device Marking

3612

餂?001

Fairchild Semiconductor Corporation

Device

FDT3612

Reel Size

13鈥欌€?/div>

Tape width

12mm

Quantity

2500 units

FDT3612 Rev. C1 (W)

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
3.7A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
120 毫歐 @ 3.7A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
20nC @ 10V
輸入電容 (Ciss) @ Vds
632pF @ 50V
功率 - 最大
1.1W
安裝類型
表面貼裝
封裝/外殼
TO-261-4，TO-261AA
供應(yīng)商設(shè)備封裝
SOT-223-4
包裝
帶卷 (TR)
其它名稱
FDT3612-NDFDT3612TR

FDT3612相關(guān)型號(hào)PDF文件下載

型號(hào)

版本

描述

廠商

下載
FDT3612

英文版

100V N-Channel PowerTrench MOSFET

FAIRCHILD

FDT3612
FDT3612

英文版

MOSFET N-CH 100V 3.7A SOT-223

FDT3612
FDT3612

英文版

100V N-Channel PowerTrench MOSFET

FAIRCHILD ...

FDT3612
FDT3N40

英文版

Fairchild

FDT3N40
FDT3N40TF

英文版

MOSFET N-CH 400V 2A SOT-223

FDT3N40TF

FDT3612 Datasheet

PDF預(yù)覽

FDT3612 產(chǎn)品屬性

FDT3612相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號(hào)推薦

FDT3612 Datasheet

PDF預(yù)覽

FDT3612 產(chǎn)品屬性

FDT3612相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號(hào)推薦

建議反饋

PDF糾錯(cuò)X