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FDS8978 Datasheet

  • FDS8978

  • Dual N-Channel PowerTrench MOSFET

  • 9頁

  • FAIRCHILD

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FDS8978 N-Channel PowerTrench
廬
MOSFET
July 2005
FDS8978
Dual N-Channel PowerTrench
廬
MOSFET
30V, 7.5A, 18m鈩?/div>
Features
r
DS(ON)
= 18m鈩? V
GS
= 10V, I
D
= 7.5A
r
DS(ON)
= 21m鈩? V
GS
= 4.5V, I
D
= 6.9A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
100% Rg Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
5
6
7
8
Q1
Q2
4
3
2
1
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
胃JA
= 78
o
C/W)
Continuous (T
A
= 25 C, V
GS
= 4.5V, R
胃JA
= 78 C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
Parameter
Ratings
30
鹵20
7.5
6.9
Figure 4
57
1.6
13
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Ambient (Note 4)
78
170
183
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
漏2005 Fairchild Semiconductor Corporation
FDS8978 Rev. A
1
www.fairchildsemi.com

FDS8978 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • PowerTrench®

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 30V

  • 7.5A

  • 18 毫歐 @ 7.5A，10V

  • 2.5V @ 250µA

  • 26nC @ 10V

  • 907pF @ 15V

  • 1.6W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 帶卷 (TR)

  • FDS8978-NDFDS8978TR

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