August 1997
FDS8936S
Dual N-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to provide superior switching performance
and minimize on-state resistance. These devices are
particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
Low gate charge.
5.0 A, 30 V. R
DS(ON)
= 0.040
鈩?/div>
@ V
GS
= 10 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT -6
TM
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless other wise noted
FDS8936S
30
鹵20
(Note 1a)
Units
V
V
A
5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
FDS8936S Rev.C
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