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FDS8874 Datasheet

  • FDS8874

  • N-Channel PowerTrench MOSFET

  • 532.30KB

  • 11頁

  • FAIRCHILD

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FDS8874 N-Channel PowerTrench
廬
MOSFET
August 2005
FDS8874
N-Channel PowerTrench
廬
MOSFET
30V, 16A, 5.5m鈩?/div>
Features
r
DS(ON)
= 5.5m鈩? V
GS
= 10V, I
D
= 16A
r
DS(ON)
= 7.0m鈩? V
GS
= 4.5V, I
D
= 15A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
100% Rg tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
T
A
= 25擄C unless otherwise noted
Parameter
Ratings
30
鹵20
16
15
Figure 4
265
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
胃JA
= 50
o
C/W)
Continuous (T
A
= 25 C, V
GS
= 4.5V, R
胃JA
= 50 C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FDS8874
Device
FDS8874
Package
SO-8
1
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
漏2005 Fairchild Semiconductor Corporation
FDS8874 Rev. A

FDS8874 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 16A

  • 5.5 毫歐 @ 16A，10V

  • 2.5V @ 250µA

  • 72nC @ 10V

  • 3990pF @ 15V

  • 2.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • FDS8874-ND

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